新硅能IGBT芯片采用先进的器件结构和工艺制程，以实现更低的导通压降与更小的开关损耗，提升器件短路能力。涵盖600V~1700V电压，可以在满足电源系统高频化的同时，实现更高的效率，适合应用于光伏储能逆变、充电桩、汽车电机驱动、白色家电等领域。
| Part Number | Package | V(BR)CES (V) | V CE(SAT)(V)@25℃ | IC (A) | VGE (V) | Vth (V) | VF (V) | Automotive | Status | ||
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| SMG065N40E1 | TO-247 | 650 | 1.7 | 1.9 | 40 | 30 | 4 | 6 | 1.75 | N | Developing |
| SMG065N80E1 | TO-247 | 700 | 1.6 | 1.8 | 80 | 30 | 4.5 | 6.5 | 1.74 | N | Production |
| SMG120N40E1 | TO-247 | 1200 | 1.7 | 1.95 | 40 | 30 | 4.5 | 6 | 2.2 | N | Developing |
| SMG120N60E1 | TO-247 | 1250 | 1.9 | 2.3 | 60 | 30 | 4.5 | 6.5 | 2.4 | N | Production |
| SMG120N80E1 | TO-247 | 1200 | 1.7 | 1.95 | 80 | 30 | 4.5 | 6 | 2.2 | N | Developing |
