• Silikron 30-V P-Channel Trench Power MOSFET with 11 m惟 Maximum On-Resistance in SO-8 Footprint Area
  •     SuZhou Silikron Semiconductor Co. limited released 30-V P-channel power MOSFET in the SO-8 footprint area, uses advanced trench technology to provide excellent RDS(ON), and low gate charge with a 25V gate rating.  The maximum on-resistance was down to 11 mΩ at a 10-V gate drive and 15 mΩ at 4.5 V, 15% lower than competitor products . This device is suitable for use as a load switch or in PWM applications. Standard Product SSF3609 is Pb-free (meets ROHS)


All Silikron products and materials are RoHS compliant.